Dopant Profile and Gate Geometric Effects on Polysilicon Gate Depletion in Scaled MOS
نویسندگان
چکیده
Polysilicon depletion effects show a strong gate length dependence according to experimental p-channel MOS capacitance–voltage ( – ) data. The effect can be influenced not only by gate geometries, but also by dopant profiles in poly-gates. These effects have been modeled and verified using device simulation. Nonuniform dopant distributions in the vertical and lateral direction in the poly-gate cause additional potential drops. The potential drop in the poly-gate becomes critical as the gate geometry is scaled down due to edge and corner depletions resulting from fringing electric fields.
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